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1. general description the nts0101 is a 1-bit, dual supply translat ing transceiver with auto direction sensing, that enables bidirectional voltage level translation. it features two 1-bit input-output ports (a and b), one output enable input (oe) and two supply pins (v cc(a) and v cc(b) ). v cc(a) can be supplied at any voltage between 1.65 v and 3.6 v. v cc(b) can be supplied at any voltage between 2.3 v and 5.5 v. this flexibility makes the devi ce suitable for translating between any of the voltage nodes (1.8 v, 2.5 v, 3.3 v and 5.0 v). pins a and oe are referenced to v cc(a) and pin b is referenced to v cc(b) . a low level at pin oe causes the outputs to assume a high-impedance off-state. this device is fully specified for partial power-down applications using i off . the i off circuitry disables th e output, preventing the damaging backflow current through the device when it is powered down. 2. features and benefits ? wide supply voltage range: ? v cc(a) : 1.65 v to 3.6 v and v cc(b) : 2.3 v to 5.5 v ? maximum data rates: ? push-pull: 50 mbps ? i off circuitry provides partial power-down mode operation ? inputs accept voltages up to 5.5 v ? esd protection: ? hbm jesd22-a114e class 2 exceeds 2500 v for a port ? hbm jesd22-a114e class 3b exceeds 8000 v for b port ? mm jesd22-a115-a exceeds 200 v ? cdm jesd22-c101e exceeds 1500 v ? latch-up performance exceeds 100 ma per jesd 78b class ii ? multiple package options ? specified from ? 40 ? cto+85 ? c and ? 40 ? cto+125 ? c 3. applications ? i 2 c/smbus ? uart ? gpio nts0101 dual supply translating tr ansceiver; open drain; auto direction sensing rev. 5 ? 11 august 2014 product data sheet
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 2 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 4. ordering information 5. marking [1] the pin 1 indicator is on the lower left co rner of the device, below the marking code. 6. functional diagram table 1. ordering information type number package temperature range name description version nts0101gw ? 40 ? cto+125 ? c sc-88 plastic surface-mounted package; 6 leads sot363 nts0101gm ? 40 ? cto+125 ? c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 ? 1.45 ? 0.5 mm sot886 nts0101gf ? 40 ? c to +125 ? c xson6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 ? 1 ? 0.5 mm sot891 nts0101gs ? 40 ? c to +125 ? c xson6 extremely thin small outline package; no leads; 6 terminals; body 1.0 ? 1.0 ? 0.35 mm sot1202 table 2. marking type number marking code [1] nts0101gw s1 nts0101gm s1 nts0101gf s1 nts0101gs s1 fig 1. logic symbol 001aan317 5 3 oe gate bias a 4 b v cc(a) v cc(b)
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 3 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 7. pinning information 7.1 pinning 7.2 pin description 8. functional description [1] h = high voltage level; l = low voltage level; x = don?t care; z = high-impedance off-state. [2] when either v cc(a) or v cc(b) is at gnd level, the device goes into power-down mode. fig 2. pin configuration sot363 fig 3. pin config uration sot886 fig 4. pin configuration sot891 and sot1202 nts0101 v cc(a) v cc(b) gnd ab 001aan318 1 2 3 6 oe 5 4 nts0101 gnd 001aan319 v cc(a) a oe v cc(b) b transparent top view 2 3 1 5 4 6 nts0101 gnd 001aan320 v cc(a) a oe v cc(b) b transparent top view 2 3 1 5 4 6 table 3. pin description symbol pin description v cc(a) 1 supply voltage a gnd 2 ground (0 v) a 3 data input or output (referenced to v cc(a) ) b 4 data input or output (referenced to v cc(b) ) oe 5 output enable input (active high; referenced to v cc(a) ) v cc(b) 6 supply voltage b table 4. function table [1] supply voltage input input/output v cc(a) v cc(b) oe a b 1.65 v to v cc(b) 2.3 v to 5.5 v l z z 1.65 v to v cc(b) 2.3 v to 5.5 v h input or output output or input gnd [2] gnd [2] xzz
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 4 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 9. limiting values [1] the minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed. [2] v cco is the supply voltage associated with the output. [3] for sc-88 and sc-74a packages: above 87.5 ? c the value of p tot derates linearly with 4.0 mw/k. for xson6 packages: above 118 ? c the value of p tot derates linearly with 7.8 mw/k. 10. recommended operating conditions [1] the a and b sides of an unused i/o pair must be held in the same state, both at v cci or both at gnd. [2] v cc(a) must be less than or equal to v cc(b) . table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc(a) supply voltage a ? 0.5 +6.5 v v cc(b) supply voltage b ? 0.5 +6.5 v v i input voltage a port and oe input [1] [2] ? 0.5 +6.5 v b port [1] [2] ? 0.5 +6.5 v v o output voltage active mode [1] [2] a or b port ? 0.5 v cco +0.5 v power-down or 3-state mode [1] a port ? 0.5 +4.6 v b port ? 0.5 +6.5 v i ik input clamping current v i <0v ? 50 - ma i ok output clamping current v o <0v ? 50 - ma i o output current v o =0vtov cco [2] - ? 50 ma i cc supply current i cc(a) or i cc(b) -1 0 0m a i gnd ground current ? 100 - ma t stg storage temperature ? 65 +150 ?c p tot total power dissipation t amb = ? 40 ? c to +125 ?c [3] -2 5 0m w table 6. recommended operating conditions [1] [2] symbol parameter conditions min max unit v cc(a) supply voltage a 1.65 3.6 v v cc(b) supply voltage b 2.3 5.5 v t amb ambient temperature ? 40 +125 ?c ? t/ ? v input transition rise and fall rate a or b port; push-pull driving v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 10 ns/v oe input v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 10 ns/v
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 5 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 11. static characteristics [1] v cco is the supply voltage associated with the output. table 7. typical static characteristics at recommended operating conditions; voltag es are referenced to gnd (ground = 0 v); t amb = 25 ? c. symbol parameter conditions min typ max unit i i input leakage current oe input; v i = 0 v to 3.6 v; v cc(a) =1.65vto3.6v; v cc(b) = 2.3 v to 5.5 v -- ? 1 ? a i oz off-state output current a or b port; v o =0vorv cco ; v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v [1] -- ? 1 ? a i off power-off leakage current a port; v i or v o = 0 v to 3.6 v; v cc(a) =0v;v cc(b) =0vto5.5v -- ? 1 ? a b port; v i or v o = 0 v to 5.5 v; v cc(b) =0v;v cc(a) =0vto3.6v -- ? 1 ? a c i input capacitance oe input; v cc(a) = 3.3 v; v cc(b) =3.3v - 1 - pf c i/o input/output capacitance a port - 4 - pf b port - 7.5 - pf a or b port; v cc(a) = 3.3 v; v cc(b) =3.3v - 11 - pf table 8. typical supply current at recommended operating conditions; voltag es are referenced to gnd (ground = 0 v); t amb = 25 ? c. v cc(a) v cc(b) unit 2.5 v 3.3 v 5.0 v i cc(a) i cc(b) i cc(a) i cc(b) i cc(a) i cc(b) 1.8 v 0.1 0.5 0.1 1.5 0.1 4.6 ? a 2.5 v 0.1 0.1 0.1 0.8 0.1 3.8 ? a 3.3 v - - 0.1 0.1 0.1 2.8 ? a table 9. static characteristics at recommended operating conditions; volt ages are referenced to gnd (ground = 0 v). symbol parameter conditions ? 40 ? c to +85 ? c ? 40 ? c to +125 ?c unit min max min max v ih high-level input voltage a port v cc(a) = 1.65 v to 1.95 v; v cc(b) = 2.3 v to 5.5 v [1] v cci ? 0.2 - v cci ? 0.2 - v v cc(a) = 2.3 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v [1] v cci ? 0.4 - v cci ? 0.4 - v b port v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v [1] v cci ? 0.4 - v cci ? 0.4 - v oe input v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v 0.65v cc(a) -0.65v cc(a) -v
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 6 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing [1] v cci is the supply voltage associated with the input. [2] v cco is the supply voltage associated with the output. v il low-level input voltage a or b port v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 0.15 - 0.15 v oe input v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 0.35v cc(a) - 0.35v cc(a) v v oh high-level output voltage i o = ? 20 ? a v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v [2] 0.67v cco - 0.67v cco -v v ol low-level output voltage a or b port; i o =1 ma [2] v i ? 0.15 v; v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 0.4 - 0.4 v i i input leakage current oe input; v i = 0 v to 3.6 v; v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - ? 2- ? 12 ? a i oz off-state output current a or b port; v o =0vorv cco ; v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v [2] - ? 2- ? 12 ? a i off power-off leakage current a port; v i or v o = 0 v to 3.6 v; v cc(a) =0v;v cc(b) =0vto5.5v - ? 2- ? 12 ? a b port; v i or v o = 0 v to 3.6 v; v cc(b) =0v;v cc(a) =0vto3.6v - ? 2- ? 12 ? a i cc supply current v i = 0 v or v cci ; i o = 0 a [1] i cc(a) v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v -2.4 - 15 ? a v cc(a) = 3.6 v; v cc(b) = 0 v - 2.2 - 15 ? a v cc(a) = 0 v; v cc(b) =5.5v - ? 1- ? 8 ? a i cc(b) v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v -12 - 30 ? a v cc(a) = 3.6 v; v cc(b) =0v - ? 1- ? 5 ? a v cc(a) = 0 v; v cc(b) =5.5v - 1 - 6 ? a i cc(a) + i cc(b) v cc(a) = 1.65 v to 3.6 v; v cc(b) = 2.3 v to 5.5 v - 14.4 - 30 ? a table 9. static characteristics ?continued at recommended operating conditions; volt ages are referenced to gnd (ground = 0 v). symbol parameter conditions ? 40 ? c to +85 ? c ? 40 ? c to +125 ?c unit min max min max
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 7 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 12. dynamic characteristics table 10. dynamic characteristics for temperature range ? 40 ? c to +85 ?c [1] voltages are referenced to gnd (ground = 0 v); for test circuit, see figure 7 ; for wave forms, see figure 5 and figure 6 . symbol parameter conditions v cc(b) unit 2.5 v ? 0.2 v 3.3 v ? 0.3 v 5.0 v ? 0.5 v min max min max min max v cc(a) = 1.8 v ? 0.15 v t phl high to low propagation delay a to b - 4.6 - 4.7 - 5.8 ns t plh low to high propagation delay a to b - 6.8 - 6.8 - 7.0 ns t phl high to low propagation delay b to a - 4.4 - 4.5 - 4.7 ns t plh low to high propagation delay b to a - 5.3 - 4.5 - 0.5 ns t en enable time oe to a; b - 200 - 200 - 200 ns t dis disable time oe to a; no external load [2] -25-25-25ns oe to b; no external load [2] -25-25-25ns oe to a - 230 - 230 - 230 ns oe to b - 200 - 200 - 200 ns t tlh low to high output transition time a port 3.2 9.5 2.3 9.3 1.8 7.6 ns b port 3.3 10.8 2.7 9.1 2.7 7.6 ns t thl high to low output transition time a port 2.0 5.9 1.9 6.0 1.7 13.3 ns b port 2.9 7.6 2.8 7.5 2.8 10.0 ns t w pulse width data inputs 20 - 20 - 20 - ns f data data rate - 50 - 50 - 50 mbps v cc(a) = 2.5 v ? 0.2 v t phl high to low propagation delay a to b - 3.2 - 3.3 - 3.4 ns t plh low to high propagation delay a to b - 3.5 - 4.1 - 4.4 ns t phl high to low propagation delay b to a - 3.0 - 3.6 - 4.3 ns t plh low to high propagation delay b to a - 2.5 - 1.6 - 0.7 ns t en enable time oe to a; b - 200 - 200 - 200 ns t dis disable time oe to a; no external load [2] -20-20-20ns oe to b; no external load [2] -20-20-20ns oe to a - 200 - 200 - 200 ns oe to b - 200 - 200 - 200 ns t tlh low to high output transition time a port 2.8 7.4 2.6 6.6 1.8 6.2 ns b port 3.2 8.3 2.9 7.9 2.4 6.8 ns
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 8 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing [1] t en is the same as t pzl and t pzh . t dis is the same as t plz and t phz . [2] delay between oe going low and when the outputs are disabled. t thl high to low output transition time a port 1.9 5.7 1.9 5.5 1.8 5.3 ns b port 2.2 7.8 2.4 6.7 2.6 6.6 ns t w pulse width data inputs 20 - 20 - 20 - ns f data data rate - 50 - 50 - 50 mbps v cc(a) = 3.3 v ? 0.3 v t phl high to low propagation delay a to b - - - 2.4 - 3.1 ns t plh low to high propagation delay a to b - - - 4.2 - 4.4 ns t phl high to low propagation delay b to a - - - 2.5 - 3.3 ns t plh low to high propagation delay b to a - - - 2.5 - 2.6 ns t en enable time oe to a; b - - - 200 - 200 ns t dis disable time oe to a; no external load [2] ---15-15ns oe to b; no external load [2] ---15-15ns oe to a - - - 260 - 260 ns oe to b - - - 200 - 200 ns t tlh low to high output transition time a port - - 2.3 5.6 1.9 5.9 ns b port - - 2.5 6.4 2.1 7.4 ns t thl high to low output transition time a port - - 2.0 5.4 1.9 5.0 ns b port - - 2.3 7.4 2.4 7.6 ns t w pulse width data inputs - - 20 - 20 - ns f data data rate - - - 50 - 50 mbps table 10. dynamic characteristics for temperature range ? 40 ? c to +85 ?c [1] ?continued voltages are referenced to gnd (ground = 0 v); for test circuit, see figure 7 ; for wave forms, see figure 5 and figure 6 . symbol parameter conditions v cc(b) unit 2.5 v ? 0.2 v 3.3 v ? 0.3 v 5.0 v ? 0.5 v min max min max min max
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 9 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing table 11. dynamic characteristics for temperature range ? 40 ? c to +125 ?c [1] voltages are referenced to gnd (ground = 0 v); for test circuit, see figure 7 ; for wave forms, see figure 5 and figure 6 . symbol parameter conditions v cc(b) unit 2.5 v ? 0.2 v 3.3 v ? 0.3 v 5.0 v ? 0.5 v min max min max min max v cc(a) = 1.8 v ? 0.15 v t phl high to low propagation delay a to b - 5.8 - 5.9 - 7.3 ns t plh low to high propagation delay a to b - 8.5 - 8.5 - 8.8 ns t phl high to low propagation delay b to a - 5.5 - 5.7 - 5.9 ns t plh low to high propagation delay b to a - 6.7 - 5.7 - 0.7 ns t en enable time oe to a; b - 200 - 200 - 200 ns t dis disable time oe to a; no external load [2] -30-30-30ns oe to b; no external load [2] -30-30-30ns oe to a - 250 - 250 - 250 ns oe to b - 220 - 220 - 220 ns t tlh low to high output transition time a port 3.2 11.9 2.3 11.7 1.8 9.5 ns b port 3.3 13.5 2.7 11.4 2.7 9.5 ns t thl high to low output transition time a port 2.0 7.4 1.9 7.5 1.7 16.7 ns b port 2.9 9.5 2.8 9.4 2.8 12.5 ns t w pulse width data inputs 20 - 20 - 20 - ns f data data rate - 50 - 50 - 50 mbps v cc(a) = 2.5 v ? 0.2 v t phl high to low propagation delay a to b - 4.0 - 4.2 - 4.3 ns t plh low to high propagation delay a to b - 4.4 - 5.2 - 5.5 ns t phl high to low propagation delay b to a - 3.8 - 4.5 - 5.4 ns t plh low to high propagation delay b to a - 3.2 - 2.0 - 0.9 ns t en enable time oe to a; b - 200 - 200 - 200 ns t dis disable time oe to a; no external load [2] -25-25-25ns oe to b; no external load [2] -25-25-25ns oe to a - 220 - 220 - 220 ns oe to b - 220 - 220 - 220 ns t tlh low to high output transition time a port 2.8 9.3 2.6 8.3 1.8 7.8 ns b port 3.2 10.4 2.9 9.7 2.4 8.3 ns t thl high to low output transition time a port 1.9 7.2 1.9 6.9 1.8 6.7 ns b port 2.2 9.8 2.4 8.4 2.6 8.3 ns
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 10 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing [1] t en is the same as t pzl and t pzh . t dis is the same as t plz and t phz . [2] delay between oe going low and when the outputs are disabled. t w pulse width data inputs 20 - 20 - 20 - ns f data data rate - 50 - 50 - 50 mbps v cc(a) = 3.3 v ? 0.3 v t phl high to low propagation delay a to b - - - 3.0 - 3.9 ns t plh low to high propagation delay a to b - - - 5.3 - 5.5 ns t phl high to low propagation delay b to a - - - 3.2 - 4.2 ns t plh low to high propagation delay b to a - - - 3.2 - 3.3 ns t en enable time oe to a; b - - - 200 - 200 ns t dis disable time oe to a; no external load [2] - - - 20 - 20 ns oe to b; no external load [2] - - - 20 - 20 ns oe to a - - - 280 - 280 ns oe to b - - - 220 - 220 ns t tlh low to high output transition time a port - - 2.3 7.0 1.9 7.4 ns b port - - 2.5 8.0 2.1 9.3 ns t thl high to low output transition time a port - - 2.0 6.8 1.9 6.3 ns b port - - 2.3 9.3 2.4 9.5 ns t w pulse width data inputs - - 20 - 20 - ns f data data rate - - - 50 - 50 mbps table 11. dynamic characteristics for temperature range ? 40 ? c to +125 ?c [1] ?continued voltages are referenced to gnd (ground = 0 v); for test circuit, see figure 7 ; for wave forms, see figure 5 and figure 6 . symbol parameter conditions v cc(b) unit 2.5 v ? 0.2 v 3.3 v ? 0.3 v 5.0 v ? 0.5 v min max min max min max
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 11 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 13. waveforms [1] v cci is the supply voltage associated with the input. [2] v cco is the supply voltage associated with the output. measurement points are given in table 12 . v ol and v oh are typical output voltage levels that occur with the output load. fig 5. the data input (a, b) to data output (b, a) propagation delay times 001aan321 a, b input b, a output t plh t phl gnd v i v oh v m v m v ol t thl 10 % 90 % t tlh measurement points are given in table 12 . v ol and v oh are typical output voltage levels that occur with the output load. fig 6. enable and disable times 001aal919 t plz t phz outputs disabled outputs enabled outputs enabled output low-to-off off-to-low output high-to-off off-to-high oe input v oh v cco gnd v ol gnd v i t pzl t pzh v y v m v m v x v m table 12. measurement points [1] [2] supply voltage input output v cco v m v m v x v y 1.8 v ? 0.15 v 0.5v cci 0.5v cco v ol + 0.15 v v oh ? 0.15 v 2.5 v ? 0.2 v 0.5v cci 0.5v cco v ol + 0.15 v v oh ? 0.15 v 3.3 v ? 0.3 v 0.5v cci 0.5v cco v ol + 0.3 v v oh ? 0.3 v 5.0 v ? 0.5 v 0.5v cci 0.5v cco v ol + 0.3 v v oh ? 0.3 v
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 12 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing [1] v cci is the supply voltage associated with the input. [2] for measuring data rate, pulse width, propagat ion delay and output rise and fall measurements, r l = 1 m ? . for measuring enable and disable times, r l = 50 k ? . [3] v cco is the supply voltage associated with the output. test data is given in table 13 . all input pulses are supplied by generators having the following characteristics: prr ? 10 mhz; z o = 50 ? ; dv/dt ? 1.0 v/ns. r l = load resistance. c l = load capacitance including jig and probe capacitance. v ext = external voltage for measuring switching times. fig 7. test circuit for measuring switching times v m v m t w t w 10 % 90 % 0 v v i v i negative pulse positive pulse 0 v v m v m 90 % 10 % t f t r t r t f 001aal963 v ext v cc v i v o dut c l r l r l g table 13. test data supply voltage input load v ext v cc(a) v cc(b) v i [1] ? t/ ? v c l r l [2] t plh , t phl t pzh , t phz t pzl , t plz [3] 1.65 v to 3.6 v 2.3 v to 5.5 v v cci ? 1.0ns/v 15pf 50k ? , 1 m ? open open 2v cco
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 13 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 14. application information 14.1 applications voltage level-translation applications. the nts0101 can be used in point-to-point applications to interface be tween devices or systems oper ating at different supply voltages. the device is primarily targeted at i 2 c or 1-wire which use open-drain drivers. it may also be used in applications where push-pull drivers are connected to the ports, however the ntb0101 ma y be more suitable. 14.2 architecture the architecture of the nts0101 is shown in figure 9 . the device does not require an extra input signal to control the direction of data flow from a to b or b to a. the nts0101 is a "switch" type voltage translat or, it employs two key circuits to enable voltage translation: 1. a pass-gate transistor (n-channel) that ties the ports together. 2. an output edge-rate accelerator that detects and accelerates rising edges on the i/o pins. fig 8. typical operating circuit 001aan322 oe nts0101 system a data b v cc(a) v cc(b) system controller data 1.8 v 1.8 v 3.3 v 0.1 f 0.1 f 1 f 3.3 v fig 9. architecture of nts0101 i/o cel 001aal965 v cc(a) v cc(b) ab 10 k 10 k t1 t3 t2 one shot one shot gate bias
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 14 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing the gate bias voltage of the pass gate tran sistor (t3) is set at approximately one threshold voltage above the v cc level of the low-voltage side. during a low-to-high transition, the output one-shot accelerates th e output transition by switching on the pmos transistors (t1, t2). it bypasses the 10 k ? pull-up resistors and increases the current drive capability. the o ne-shot is activated once the inpu t transition reac hes approximately v cci /2; it is de-activated approximately 50 ns after the output reaches v cco /2. during the acceleration time, the driver output resistance is between approximately 50 ? and 70 ? . to avoid signal contention and minimize dynamic i cc , the user should wait for the one-shot circuit to turn-off before applyin g a signal in the opposite direction. pull-up resistors are included in the device for dc current sourcing capability. 14.3 input driver requirements as the nts0101 is a switch type translator, prope rties of the input driver directly effect the output signal. the external open-drain or push-pull driver applied to an i/o determines the static current sinking capability of the syst em. the max data rate , high-to-low output transition time (t thl ), and propagation delay (t phl ), are dependent upon the output impedance and edge-rate of the external driver. the limits provided for these parameters in the data sheet assume a driver with output impedance below 50 ? is used. 14.4 output load considerations the maximum lumped capacitive load that can be driven is dependant upon the one-shot pulse duration. in cases with very heavy capacitive loading, th ere is a risk that the output does not reach the positive rail wi thin the one-shot pulse duration. to avoid excessive capacitive loading and to ensure correct triggering of the one-shot, use short trace lengths and low capacitance connectors on nts0101 pcb layouts. the length of the pcb trace should be such that th e round-trip delay of any reflection is within the one-shot pulse duration (approximately 50 ns). it ensures low impedance termination and avoids output signal oscilla tions and one-s hot retriggering. 14.5 power-up during operation, v cc(a) must never be higher than v cc(b) . however, during power-up, v cc(a) ? v cc(b) does not damage the device, so eith er power supply can be ramped up first. there is no special power-up sequencing required. the nts0101 includes circuitry that disables all output ports when either v cc(a) or v cc(b) is switched off. 14.6 enable and disable an output enable input (oe) is used to dis able the device. setting oe = low causes all i/os to assume the high-impedance off-state. the disable time (t dis with no external load) indicates the delay between when oe goes low and when outputs actually become disabled. the enable time (t en ) indicates the amount of time the user must allow for one one-shot circuitry to become operation al after oe is taken high. to ensure the high-impedance off-state during power-up or power-down, pin oe should be tied to gnd through a pull-down resistor . the current-sourcing capability of the driver determines the minimum value of the resistor.
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 15 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 14.7 pull-up or pull-down resistors on i/os lines the a port i/o has an internal 10 k ? pull-up resistor to v cc(a) . the b port i/o has an internal 10 k ? pull-up resistor to v cc(b) . if a smaller value of pull- up resistor is required, add an external resistor in parallel to the internal 10 k ? . this pull-up resi stor effects the v ol level. when oe goes low, the internal pull-ups of the nts0101 are disabled.
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 16 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 15. package outline fig 10. package outline sot363 (sc-88) 5()(5(1&(6 287/,1( 9(56,21 (8523($1 352-(&7,21 ,668('$7( ,(& -('(& -(,7$ 627 6& z% 0 e s ' h h slq lqgh[ $ $ / s 4 ghwdlo; + ( ( y 0 $ $ % \ p p vfdoh f ; 3odvwlfvxuidfhprxqwhgs dfndjhohdgv 627 81,7 $ pd[ e s f' ( h + ( / s 4\ zy pp h ',0(16,216ppduhwkhruljlqdoglphqvlrqv $
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 17 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing fig 11. package outline sot886 (xson6) 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627 02 vrwbsr 8qlw pp pd[ qrp plq $ 'lphqvlrqvppduhwkhruljlqdoglphqvlrqv 1rwhv ,qfoxglqjsodwlqjwklfnqhvv &dqehylvleohlqvrphpdqxidfwxulqjsurfhvvhv ;621sodvwlfh[wuhpho\wklqvpdoorxwolqhsdfndjhqrohdgvwhuplqdoverg\[[pp 627 $ e '(hh // whuplqdo lqgh[duhd ' ( h h $ e / / h pp vfdoh [ [ $
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 18 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing fig 12. package outline sot891 (xson6) whuplqdo lqgh[duhd 5()(5(1&(6 287/,1( 9(56,21 (8523($1 352-(&7,21 ,668('$7( ,(& -('(& -(,7$ 627 627 ;621sodvwlfh[wuhpho\wklqvpdoorxwolqhsdfndjhqrohdgv whuplqdoverg\[[pp ' ( h h $ e / / h p p vfdoh ',0(16,216ppduhwkhruljlqdoglphqvlrqv 81,7 pp $ pd[ e ( ' hh / / $ pd[ $ ? ? 1rwh &dqehylvleohlqvrphpdqxidfwxulqjsurfhvvhv
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 19 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing fig 13. package outline sot1202 (xson6) 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627 vrwbsr 8qlw pp pd[ qrp plq $ 'lphqvlrqv 1rwh ,qfoxglqjsodwlqjwklfnqhvv 9lvleohghshqglqjxsrqxvhgpdqxidfwxulqjwhfkqrorj\ ;621h[wuhpho\wklqvpdoorxwolqhsdfndjhqrohdgv whuplqdoverg\[[pp 627 $ e '( hh / / p p vfdoh whuplqdo lqgh[duhd ' ( ? h h h / e / ? $ $
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 20 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 16. abbreviations 17. revision history table 14. abbreviations acronym description cdm charged device model dut device under test esd electrostatic discharge gpio general purpose input output hbm human body model i 2 c inter-integrated circuit mm machine model pcb printed-circuit board pmos positive metal oxide semiconductor smbus system management bus uart universal asynchronous receiver transmitter table 15. revision history document id release date data sheet status change notice supersedes nts0101 v.5 20140811 product data sheet - nts0101 v.4 modifications: ? type number nts0101gv has been removed nts0101 v.4 20120514 product data sheet - nts0101 v.3 modifications: ? package outline drawing of sot886 (figure 11) modified. nts0101 v.3 20111110 product data sheet - nts0101 v.2 modifications: ? legal pages updated. nts0101 v.2 20110427 product data sheet - nts0101 v.1 nts0101 v.1 20101230 product data sheet - -
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 21 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing 18. legal information 18.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 18.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 18.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
nts0101 all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all rights res erved. product data sheet rev. 5 ? 11 august 2014 22 of 23 nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 18.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 19. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors nts0101 dual supply translating transceiver; op en drain; auto direction sensing ? nxp semiconductors n.v. 2014. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 11 august 2014 document identifier: nts0101 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 20. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 functional description . . . . . . . . . . . . . . . . . . . 3 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 recommended operating conditions. . . . . . . . 4 11 static characteristics. . . . . . . . . . . . . . . . . . . . . 5 12 dynamic characteristics . . . . . . . . . . . . . . . . . . 7 13 waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 application information. . . . . . . . . . . . . . . . . . 13 14.1 applications . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14.2 architecture . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14.3 input driver requirements . . . . . . . . . . . . . . . . 14 14.4 output load considerations . . . . . . . . . . . . . . . 14 14.5 power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14.6 enable and disable . . . . . . . . . . . . . . . . . . . . . 14 14.7 pull-up or pull-down resistors on i/os lines . . 15 15 package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 16 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 20 17 revision history . . . . . . . . . . . . . . . . . . . . . . . . 20 18 legal information. . . . . . . . . . . . . . . . . . . . . . . 21 18.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 21 18.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 18.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 18.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 22 19 contact information. . . . . . . . . . . . . . . . . . . . . 22 20 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

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